Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer

A nitride-based semiconductor light-emitting diode comprising:

• a substrate formed with a recess portion on a main surface, and
• a nitride-based semiconductor layer having a light-emitting layer on said main surface and including a first side surface formed by a (000-1) plane formed to start from a first inner side surface of said recess portion and a second side surface formed on a region opposite to said first side surface with said light-emitting layer therebetween to start from a second inner side surface of said recess portion on said main surface.

A method of forming a nitride-based semiconductor layer, comprising steps of:

• forming (000-1) facets substantially perpendicular to a main surface of a substrate on said substrate having said main surface of a nonpolar face to be in contact with said main surface;
• and
• forming a nitride-based semiconductor layer on said main surface.

A method of manufacturing a nitride-based semiconductor light-emitting device, comprising steps of:

• forming recess portions extending in a striped manner in a [K, −H, −K+H, 0] direction within a main surface of a substrate on said substrate having said main surface formed by a (H, K, −H−K, 0) plane;
• and
• forming a nitride-based semiconductor device layer having a light-emitting layer with a main surface formed by the (H, K, −H−K, 0) plane by growing facets formed by a (000-1) plane of a nitride-based semiconductor on regions corresponding to first side surfaces of said recess portions on said main surface and by growing reflection surfaces formed by growth surfaces of said nitride-based semiconductor layer and extending to be inclined at a prescribed angle with respect to said facets on regions opposed to said facets.

A method of manufacturing a nitride-based semiconductor light-emitting diode, comprising steps of:

• forming recess portions on a main surface of a substrate;
• and
• forming a nitride-based semiconductor layer on said main surface by having a light-emitting layer on said main surface and by including first side surfaces formed by (000-1) planes starting from first inner side surfaces of said recess portions and second side surfaces starting from second inner side surfaces of said recess portions on regions opposed to said first side surfaces on said main surface.