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US 2010/0246609 A1Published application
Semiconductor Lasing Device
OwnerRichard Phelan, John A. Patchell +1inventors
InventorsRichard Phelan, John A. Patchell, James C. O'Gorman
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Abstract
The present application provides a semiconductor Fabry-Perot dual mode lasing device having terahertz characteristics resulting in significant advantages over the prior art including for example operation at room temperatures and the absence of re-growth processing requirements.
Claims21
-50. (canceled)
A semiconductor lasing device adapted to have concurrent dual mode operation, where the dual modes coherently combine to provide a terahertz radiation device.
A method of manufacturing a semiconductor terahertz radiation device comprising the steps of:
- a) selecting a pattern of features suitable for providing a concurrent dual mode operating lasing device, and
- b) fabricating a semiconductor lasing device with the selected pattern of features.
Dependencies are inferred from the claim text.