Sensing and latching circuit for memory arrays

Abstract

According to one exemplary embodiment, a memory sensing and latching circuit includes a sensing circuit for evaluating bit lines in a memory array and providing a sensed output. The memory sensing and latching circuit further includes a latching circuit including a dynamic one-shot circuit driven by the sensed output, a sense amplifier enable signal, and a precharge clock. The latching circuit further includes a storage circuit for storing a one-shot output of the dynamic one-shot circuit, where the one-shot output corresponds to the sensed output. The one-shot output of the dynamic one-shot circuit is stored in the storage circuit during an evaluation of the sensed output. The evaluation of the sensed output is responsive to the sense amplifier enable signal.

Dependencies are inferred from the claim text.