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AssigneeCornell University
InventorsEdwin C. Kan, Tuo-Hung Hou
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Embodiments of tunneling barriers and methods for same can embed modules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application.
A semiconductor device comprising:
A nonvolatile flash memory card, comprising:
A method of forming a tunnel barrier for a semiconductor device, comprising:
Dependencies are inferred from the claim text.