Method of programming nonvolatile memory device
AssigneeHynix Semiconductor Inc.
InventorsHee Youl LEE, Ki Seog Kim
Life of this patent
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Abstract
In a method of programming a nonvolatile memory device, when a program is performed, a program voltage is applied to a first word line selected for the program. A first pass voltage is applied to three second word lines neighboring the first word line toward a source select line. First and second voltages are applied to third and fourth word lines neighboring the first word line toward the source select line. A second pass voltage is applied to the remaining word lines other than the first to fourth word lines.
Claims18
A method of programming a nonvolatile memory device, comprising:
- providing the nonvolatile memory device including memory blocks that each comprise a plurality of word lines between a drain select line and a source select line;
- enabling a selected memory block in response to a program command;
- applying a program voltage to a selected word line of the enabled memory block;
- applying a first pass voltage to a first group, which is at least three word lines adjacent to the selected word line toward the source select line;
- applying a first voltage to a first word line which is adjacent to the first group toward the source select line;
- applying a second voltage to a second word line which is adjacent toward the first word line to the source select line;
- and
- applying a second pass voltage to remaining word lines.
A method of programming a nonvolatile memory device, comprising:
- providing the nonvolatile memory device including memory blocks each comprising a plurality of word lines between a drain select line and a source select line;
- enabling a selected memory block in response to a program command;
- applying a program voltage to a selected word line of the enabled memory block;
- applying a first pass voltage to a first group, which is at least three word lines adjacent to the selected word line toward the source select line, and to a second group, which is at least one or more word line adjacent to the selected word line toward the drain select line;
- applying a first voltage to a first word line adjacent to the first group toward the source select line and to a second word line adjacent to the second group toward the drain select line;
- applying a second voltage to a third word line adjacent to the first word line toward the source select line and a fourth word line adjacent to the second word line toward the drain select line;
- and
- applying a second pass voltage to remaining word lines.
A method of programming a nonvolatile memory device, comprising:
- providing the nonvolatile memory device including memory blocks each comprising a plurality of word lines between a drain select line and a source select line;
- enabling a selected memory block in response to a program command;
- applying a program voltage to a first group, which is at least three word lines adjacent to the selected word line toward the source select line, and to a second group, which is at least one or more word line adjacent to the selected word line toward the drain select line;
- applying a first voltage to a first word line adjacent to the first group toward the source select line;
- applying a second voltage to a second word line adjacent to the first word line toward the source select line;
- and
- applying a second pass voltage to remaining word lines.
Dependencies are inferred from the claim text.