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US 2010/0246259 A1Published application
Flash memory device, programming method and memory system
AssigneeSamsung Electronics Co., Ltd.
InventorOh Suk KWON
Life of this patent
Estimating the term…
Abstract
Provided is a programming method in a flash memory device. The programming method applies a first pass voltage to a selection word line and a non-selection word line, applies a local voltage to the non-selection word line, applies a second pass voltage to the selection word line, and applies a programming voltage to the selection word line.
Claims20
A programming method for a flash memory device, the programming method comprising:
- applying a first pass voltage to a selection word line and a non-selection word line;
- applying a local voltage to the non-selection word line;
- applying a second pass voltage to the selection word line;
- and
- applying a programming voltage to the selection word line.
2 more elements
A flash memory device, comprising:
- a memory cell array;
- a bias circuit configured to generate voltages applied to the memory cell array during a programming operation;
- and
- a control logic configured to control operation of the bias circuit,
- wherein the control logic is further configured to control application of a first pass voltage to a selection word line and non-selection word line of the memory cell array, application of a local voltage to the non-selection word line, application of a second pass voltage to the selection word line, and application of a programming voltage to the selection word line.
2 more elements
A memory system, comprising:
- a flash memory device, and a controller configured to control the overall operation of the flash memory device,
- wherein the flash memory device comprises:
- a bias circuit configured to generate voltages applied to the memory cell array during a programming operation;
- and
- a control logic configured to control operation of the bias circuit,
- wherein the control logic is further configured to control application of a first pass voltage to a selection word line and non-selection word line of the memory cell array, application of a local voltage to the non-selection word line, application of a second pass voltage to the selection word line, and application of a programming voltage to the selection word line.
3 more elements
Dependencies are inferred from the claim text.