Nonvolatile memory device and related method of programming
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Won YUN, Kihwan CHOI
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Abstract
A nonvolatile memory device comprises a memory cell array comprising a plurality of memory cells, a voltage generator configured to generate voltages to program the plurality of memory cells, and a control logic component configured to control the voltage generator to provide a plurality of program voltages to selected memory cells during successive iterations of a program loop. Wherein where memory cells corresponding to one logic state are judged to be program passed during a current iteration of the program loop, the control logic component controls the voltage generator such that a program voltage corresponding to the one logic state is skipped during subsequent iterations of the program loop.
Claims20
A nonvolatile memory device comprising:
- a memory cell array comprising a plurality of memory cells;
- a voltage generator configured to generate voltages to program the plurality of memory cells to a plurality of logic states;
- and
- a control logic component configured to control the voltage generator to provide a plurality of program voltages to selected memory cells during multiple program loop iterations,
- wherein where all of the selected memory cells corresponding to one of the plurality of logic states are judged to be program passed during a current program loop iteration, the control logic component controls the voltage generator such that a program voltage corresponding to the one of the plurality of logic states is skipped during a next program loop iteration.
A method of programming multi-bit data in a nonvolatile memory device, comprising:
- performing multiple program loop iterations in which a plurality of program voltages and a plurality of verification voltages are applied to a selected wordline to program selected memory cells into target states,
- wherein where all of the selected memory cells to be programmed at least one of the target states are successfully programmed in a current program loop iteration, generation of the program and verification voltages corresponding to the at least one target state is skipped in subsequent program loop iterations.
A method of programming multi-bit data in a nonvolatile memory device, comprising:
- (a) supplying selected memory cells with a plurality of program voltages to program the selected memory cells into target states;
- (b) supplying the selected memory cells with a plurality of program voltages to verify whether the selected memory cells are programmed into the target states;
- (c) judging whether the each of the selected memory cells is successfully programmed to a corresponding one of the target states;
- (d) storing results of the judging in a register;
- and
- (e) iterating a program loop comprising (a)-(d) until all of the selected memory cells are successfully programmed to the corresponding target states,
- wherein where all of the selected memory cells corresponding one of the target states are successfully programmed in one iteration of the program loop, generation of program and verification voltages corresponding to the one target state is skipped during subsequent iterations of the program loop.
Dependencies are inferred from the claim text.