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US 2010/0246256 A1Published application
Nonvolatile semiconductor memory
AssigneeKabushiki Kaisha Toshiba
InventorKenji SAWAMURA
Life of this patent
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Abstract
A nonvolatile semiconductor memory includes: a lower semiconductor layer; a first cell string having a plurality of memory cells formed on the lower semiconductor layer; an upper semiconductor layer formed above the lower semiconductor layer; and a second cell string having a plurality of memory cells formed on the upper semiconductor layer. A memory cell formed on a crystal defect of the upper semiconductor layer among the plurality of memory cells that form the second cell string is operated as a dummy cell.
Claims10
A nonvolatile semiconductor memory, comprising:
- a lower semiconductor layer;
- a first cell string having a plurality of memory cells formed on the lower semiconductor layer;
- a upper semiconductor layer formed on the lower semiconductor layer with an interlayer insulating film interposed therebetween;
- and
- a second cell string having a plurality of memory cells formed on the upper semiconductor layer;
- wherein
- a memory cell formed on a crystal defect in the upper semiconductor layer is a dummy cell.
4 more elements
A nonvolatile semiconductor memory, comprising:
- a lower semiconductor layer;
- a first cell string having a plurality of memory cells formed on the lower semiconductor layer;
- a upper semiconductor layer formed on the lower semiconductor layer with an interlayer insulating film interposed therebetween;
- and
- a second cell string having a plurality of memory cells formed on the upper semiconductor layer;
- wherein
- the second cell string includes 16N+1 of memory cells.
4 more elements
Dependencies are inferred from the claim text.