Nonvolatile solid state magnetic memory and recording method thereof

A recording method of a nonvolatile solid state magnetic memory, the memory comprising a recording layer of a magnetic material, comprising the step of increasing and/or decreasing a carrier (electron or hole) concentration in the recording layer,

• wherein the recording layer is a carrier induced ferromagnetic semiconductor layer which is a group IV semiconductor, a group III-V semiconductor, a group II-VI semiconductor, a group II-VI-V2 semiconductor, or an oxide semiconductor doped with transition metal element or rare earth metal element,
• wherein the nonvolatile solid state magnetic memory is configured to have a capacitance structure by comprising a predetermined substrate which supports the recording layer, and a metallic electrode layer which is provided on the recording layer via an electrically insulating layer,
• wherein the insulating layer is a Schottky barrier formed between the metallic electrode layer and the recording layer of the carrier induced ferromagnetic semiconductor,
• whereby the magnetization is rotated or reversed and the recording operation is performed.