Magnetoresistive effect memory

A magnetoresistive effect memory comprising:

• a magnetoresistive effect element including a first magnetic layer having an invariable magnetization, a second magnetic layer having a variable magnetization, and an interlayer provided between the first magnetic layer and the second magnetic layer;
• and
• a reading circuit which passes a pulse-shaped read current through the magnetoresistive effect element to identify data stored in the magnetoresistive effect element,
• wherein the density of the read current is 0.9 times or less of a predetermined current density and the pulse width of the read current is 8 nsec or less,
• the predetermined current density has 0.5 of the magnetization inversion probability of the magnetoresistive effect element when a current having a pulse width of 10 nsec is used to write data into the magnetoresistive effect element.

A magnetoresistive effect memory comprising:

• a magnetoresistive effect element including a first magnetic layer having an invariable magnetization, a second magnetic layer having a variable magnetization, and an interlayer provided between the first magnetic layer and the second magnetic layer;
• and
• a reading circuit which passes a pulse-shaped read current through the magnetoresistive effect element to identify data stored in the magnetoresistive effect element,
• wherein a pulse width Tp satisfies Conditional expression (i):
• T
• p
• ≤
• A
• J
• read
• J
• C
• 
• (
• 10
• 
• 
• nsec
• ,
• midpoint
• )
• -
• B
• (
• i
• )
• where Tp is the pulse width of the read current, Jread is the density of the read current, JC (10 ns, midpoint) is a predetermined current density, A is a first value using a read disturb occurrence probability as a parameter, and B is a second value using the read disturb occurrence probability as a parameter,
• the predetermined current density has 0.5 of the magnetization inversion probability of the magnetoresistive effect element when a current having a pulse width of 10 nsec is used to write data into the magnetoresistive effect element.