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US 2010/0246243 A1Published application
Semiconductor storage device
AssigneeNEC Electronics Corporation
InventorHiroyuki KOBATAKE
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Abstract
A semiconductor storage device in accordance with an exemplary aspect of the present invention includes a plurality of memory cells arranged in a matrix pattern, a plurality of word lines each provided so as to correspond to each line of the memory cells, a plurality of bit lines each connected to respective one of the memory cells, and a row selection circuit that, in a read operation, drives the word line to a set potential at a drive speed slower than a discharge speed of the bit line exhibited when the word line is raised roughly vertically to VDD.
Claims8
A semiconductor storage device comprising:
- a plurality of memory cells arranged in a matrix pattern;
- a plurality of word lines provided to correspond to the respective rows of the memory cells;
- a plurality of bit lines connected to a plurality of memory cells in respective columns of the memory cells;
- and
- a row selection circuit that, in a read operation, drives the word line to a set potential at a drive speed slower than a discharge speed of the bit line exhibited when the word line is raised roughly vertically to the set potential.
2 more elements
Dependencies are inferred from the claim text.