Semiconductor device configuration method
AssigneeNEC Corporation
InventorShogo Nakaya
Life of this patent
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Abstract
A plurality of three-terminal variable resistance switching elements each having a source electrode, a drain electrode, and a gate electrode are connected to each other in series. The source electrode of each of the three-terminal variable resistance switching elements and the drain electrode of its adjacent three-terminal variable resistance switching element are connected to each other through a wiring segment to form a lane. A potential holding section for holding a predetermined potential level is connected to the wiring segment. A column group is configured by selecting one of the three-terminal variable resistance elements in each lane. A common gate line is connected to each of the gate electrodes of the three-terminal variable resistance elements belonging to the column group.
Claims14
A configuration method for configuring a semiconductor device, wherein:
- said semiconductor device comprises L (L is a natural number) lanes, each said lane including a plurality of three-terminal variable resistance switching elements each having a source electrode, a drain electrode, and gate electrode and connected to each other in series, wiring segments through which said three-terminal variable resistance switching element has the source electrode connected to the drain electrode of a three-terminal variable resistance element adjacent to said three-terminal variable resistance switching element;
- a plurality of potential holding sections connected to said wiring segments for holding a predetermined potential;
- and a common gate line connected to each of the gate electrodes of three-terminal variable resistance switching elements belonging to a column group, said column group comprised of three-terminal variable resistance switching elements, each of which is arranged in each of said lanes,
- said configuration method comprising:
- a first step of holding a first end on a source side of said each lane at a predetermined write voltage with respect to a second end on a drain side of said each lane to a moment at which conduction is established from said first end to said second end;
- a second step of holding all said gate lines at the write voltage with respect to said first ends, subsequent to said first step;
- a third step, subsequent to said second step, of holding the first end of a lane to which a desired three-terminal variable resistance switching element is connected and gate lines other than a gate line to which said desired three-terminal variable resistance switching element is connected at the write voltage, until a resistance value, between the first end and said second end of the lane to which said desired three-terminal variable resistance switching element is connected, grows to a larger value than a resistance value between said first end and said second end at the instant when conduction is established between said first end and said second end in said first step;
- and
- a fourth step of holding the gate line to which said desired three-terminal variable resistance switching element is connected at the write voltage, subsequent to said third step.
Dependencies are inferred from the claim text.