Method of manufacturing thin film capacitor and thin film capacitor
AssigneeTDK Corporation
InventorsYoshihiko YANO, Yasunobu OIKAWA
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Abstract
A method of manufacturing a thin film capacitor, having: a base electrode; dielectric layers consecutively deposited on the base electrode; an internal electrode deposited between the dielectric layers; an upper electrode deposited opposite the base electrode with the dielectric layers and the internal electrode being interposed therebetween; and a cover layer deposited on the upper electrode, has depositing an upper electrode layer which is to be the upper electrode, and a cover film which is to be the cover layer on the unsintered dielectric film which is to be the dielectric layer, to fabricate a lamination component, and sintering the lamination component.
Claims12
A method of manufacturing a thin film capacitor, having a base electrode, a dielectric layer deposited on the base electrode, an upper electrode deposited opposite the base electrode with the dielectric layer being interposed therebetween, and a cover layer deposited on the upper electrode,
- the method comprising;
- fabricating a lamination component comprising an unsintered dielectric film which is to be the dielectric layer on which an upper electrode layer which is to be the upper electrode and a cover film which is to be the cover layer are deposited;
- and
- sintering the lamination component.
A method of manufacturing a thin film capacitor, having a base electrode, a dielectric layer deposited on the base electrode, an upper electrode deposited opposite the base electrode with the dielectric layer being interposed therebetween, and a cover layer deposited on the upper electrode,
- the method comprising;
- fabricating a lamination component comprising a sintered dielectric film which is to be the dielectric layer on which an upper electrode layer which is to be the upper electrode and a cover film which is to be the cover layer are deposited;
- and
- sintering the lamination component.
A thin film capacitor, comprising a base electrode, a dielectric layer deposited on the base electrode, an upper electrode deposited opposite the base electrode with the dielectric layer being interposed therebetween, and a cover layer deposited on the upper electrode,
- wherein the thin film capacitor is formed by sintering a lamination component;
- and
- wherein the lamination component is formed by depositing an upper electrode layer which is to be the upper electrode and a cover film which is to be the cover layer on an unsintered dielectric film which is to be the dielectric layer.
A thin film capacitor, having a base electrode, a dielectric layer deposited on the base electrode, an upper electrode deposited opposite the base electrode with the dielectric layer being interposed therebetween, and a cover layer deposited on the upper electrode,
- wherein the thin film capacitor is formed by sintering a lamination component;
- and
- wherein the lamination component is formed by depositing an upper electrode layer which is to be the upper electrode and a cover film which is to be the cover layer on a sintered dielectric film which is to be the dielectric layer.
Dependencies are inferred from the claim text.