Solid-state imaging device and imaging apparatus

An imaging apparatus that includes a solid-state imaging device having a light receiving unit formed in each of pixels to perform photoelectric conversion, an optical waveguide buried in an insulating layer located above said light receiving unit and provided for introducing light into said optical waveguide, and an on-chip lens formed above said optical waveguide, said imaging apparatus comprising:

• a converging optical section that collects incident light;
• said solid-state imaging device;
• and
• a signal processing section that processes a signal obtained by photoelectric conversion in said solid-state imaging device, wherein
• said solid-state imaging device includes
• a basic cell having two or more said pixels that share floating diffusion, and
• a transistor shared by said two or more pixels in said basic cell and arranged on the outside of said two or more pixels, where
• said light receiving unit is connected to said floating diffusion shared by said pixels in said basic cell through a transfer gate, said on-chip lenses are arranged substantially at regular intervals,
• said optical waveguide includes a first optical waveguide and a second optical waveguide,
• said first optical waveguide is formed so that a position in a surface of said solid-state imaging device is located at a position shifted from the center of said light receiving unit to said transistor and in the inside of said light receiving unit, and
• said second optical waveguide is formed on the upper side of said first optical waveguide so that a position in a surface of said solid-state imaging device is located at a position shifted from the center of said light receiving unit to said transistor and in the inside of said light receiving unit.

A solid-state imaging device that includes a light receiving unit formed in each of pixels to perform photoelectric conversion, an optical waveguide buried in an insulating layer located above said light receiving unit and provided for introducing light into said optical waveguide, and an on-chip lens formed above said optical waveguide, said solid-state imaging device comprising:

• a basic cell having two or more said pixels that share floating diffusion;
• and
• a transistor shared by said two or more pixels in said basic cell and arranged on the outside of said two or more pixels, wherein
• said light receiving unit is connected to said floating diffusion shared by said pixels in said basic cell through a transfer gate,
• said on-chip lenses are arranged substantially at regular intervals, and
• said optical waveguide is formed so that a position in a surface of said solid-state imaging device is located at a position shifted from the center of said light receiving unit to said transistor and in the inside of said light receiving unit and the inside of said on-chip lens.

An imaging apparatus that includes a solid-state imaging device having a light receiving unit formed in each of pixels to perform photoelectric conversion, an optical waveguide buried in an insulating layer located above said light receiving unit and provided for introducing light into said optical waveguide, and an on-chip lens formed above said optical waveguide, said imaging apparatus comprising:

• a converging optical section that collects incident light;
• said solid-state imaging device;
• and
• a signal processing section that processes a signal obtained by photoelectric conversion in said solid-state imaging device, wherein
• said solid-state imaging device includes
• a basic cell having two or more said pixels that share floating diffusion, and
• a transistor shared by said two or more pixels in said basic cell and arranged on the outside of said two or more pixels, where
• said light receiving unit is connected to said floating diffusion shared by said pixels in said basic cell through a transfer gate,
• said on-chip lenses are arranged substantially at regular intervals, and
• said optical waveguide is formed so that a position in a surface of said solid-state imaging device is located at a position shifted from the center of said light receiving unit to said transistor and in the inside of said light receiving unit and the inside of said on-chip lens.