Solid-state image element and solid-state image device

A solid-state image element having a shunt wiring structure for vertically and horizontally transferring a charge signal photoelectrically converted in each pixel,

• the solid-state image element comprising:
• a vertical transfer register for vertically transferring the charge signal in response to a control signal inputted to a first transfer electrode;
• a horizontal transfer register for horizontally transferring the charge signal in response to a control signal inputted to a second transfer electrode;
• a plurality of first light-shielding films formed at least on the vertical transfer register;
• a substrate potential setting electrode fixed at a ground potential;
• a plurality of second light-shielding films horizontally formed in stripes and connected to the substrate potential setting electrode;
• at least one substrate potential setting pixel region having a high-concentration impurity region at least in a surface layer of the substrate potential setting pixel region;
• a connection electrode for connecting the high-concentration impurity region of the substrate potential setting pixel region and the second light-shielding film;
• and
• photoelectric conversion regions two-dimensionally arranged in regions other than the substrate potential setting pixel region so as to be adjacent to the vertical transfer register via the first transfer electrode, the photoelectric conversion region being made up of a high-concentration impurity region and an impurity region for storing signal charge.