Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
AssigneeSanDisk 3D LLC
InventorsApril D. Schricker, Steven Maxwell
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Abstract
Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects this invention, such as non-volatile memories, that include (1) a bottom electrode, (2) a resistivity-switchable layer disposed above and in contact with the bottom electrode, and (3) a top electrode disposed above and in contact with the resistivity-switchable layer; wherein the resistivity-switchable layer includes a carbon-based material and a dielectric filler material. Numerous additional aspects are provided.
Claims26
A method of forming a microelectronic structure, the method comprising:
- forming a resistivity-switchable layer on a bottom electrode;
- and
- forming a top electrode above and in contact with the resistivity-switchable layer;
- wherein the resistivity-switchable layer comprises a carbon-based material and a dielectric filler material.
A microelectronic structure comprising:
- a bottom electrode
- a resistivity-switchable layer disposed above and in contact with the bottom electrode;
- and
- a top electrode disposed above and in contact with the resistivity-switchable layer;
- wherein the resistivity-switchable layer comprises a carbon-based material and a dielectric filler material.
Dependencies are inferred from the claim text.