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US 2010/0244985 A1Published application
RF Switch with High Isolation Performance
AssigneeElectronics and Telecommunications Research Institute
InventorsDong-Pil Chang, In-Bok Yom
Life of this patent
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Abstract
Provided is a RF switch for switching a path of a RF signal using a semiconductor transistor such as a field effect transistor (FET). The RF switch includes a plurality of resonators connected to a RF transmission line, and at least one of switching elements connected in shunt or in series between the plural of resonators. The plurality of resonators resonate by interacting with the switching elements when the switching elements are shorted or open.
Claims12
A radio frequency (RF) switch comprising:
- a plurality of resonators connected to a RF transmission line;
- and
- at least one of switching elements connected between the plural of resonators in shunt,
- wherein the plurality of resonators resonate by interacting with the switching elements when the switching elements are shorted.
1 more element
A radio frequency (RF) switch, comprising:
- a plurality of resonators connected to a RF transmission line;
- and
- at least one of switching elements connected in series between the plurality of resonators,
- wherein the plurality of resonators resonate by interacting with the switching elements when the switching elements are open.
1 more element
Dependencies are inferred from the claim text.