Semiconductor device having a complementary field effect transistor

A semiconductor device comprising:

• a noninverting amplifier that includes first and second input terminals, a first output terminal, and a feedback resistor that is inserted between the first output terminal and the second input terminal;
• a first substrate voltage generating circuit that includes a comparator having third and fourth input terminals and a second output terminal, and generates a substrate voltage of one of first field effect transistors of a first conductivity type and second field effect transistors of a second conductivity type in a complementary field effect transistor circuit;
• a first replica transistor that is a replica of one of the first and second field effect transistors, the first replica transistor being diode-connected;
• and
• a first input voltage generating circuit that generates a voltage that appears in the first output terminal when a current flowing in the first replica transistor has a predetermined first target value, the first input voltage generating circuit outputting the voltage to the third input terminal, wherein
• a substrate voltage of the first replica transistor is the substrate voltage generated by the first substrate voltage generating circuit,
• the first output terminal and the fourth input terminal are connected to each other,
• the voltage of the predetermined first voltage value is input to the first input terminal,
• the first replica transistor is inserted in a forward direction between the second input terminal and a ground, and
• the comparator in the first substrate voltage generating circuit generates the substrate voltage of one of the first and second field effect transistors, based on the voltage that is input to the third input terminal and the output voltage of the first output terminal that is input to the fourth input terminal, the comparator outputting the substrate voltage from the second output terminal.