High-voltage cmos charge pump

Abstract

Provided is a high-voltage complementary metal-oxide semiconductor (CMOS) charge pump. The high-voltage CMOS charge pump includes a first Dickson charge pump for doubling a supply voltage based on an input clock signal and a complementary input clock signal with reversed phases to each other; a level shifter for doubling voltage levels of the input clock signal and the complementary input clock signal based on an output signal and a complementary output signal of the first Dickson charge pump as power sources, to thereby output a doubled-output clock signal and a doubled-complementary output clock signal; and a second Dickson charge pump for doubling voltage levels of the output signal and the complementary output signal based on the doubled-output clock signal and the doubled-complementary output clock signal from the level shifter.

Dependencies are inferred from the claim text.