Back to results
US 2010/0244882 A1Published application
Burn-In Test Method and System
OwnerHong-Sok Choiinventor
Life of this patent
Estimating the term…
Abstract
A method for performing a burn-in test of a metal wire for a signal transmission of a semiconductor device including driving a first terminal of the metal wire with a first voltage and forming a current path in the metal wire by driving a second terminal of the metal wire with a second voltage whose level is different from that of the first voltage.
Claims22
A method for performing a burn-in test of a metal wire for a signal transmission of a semiconductor device, comprising:
- driving a first terminal of the metal wire with a first voltage;
- and
- forming a current path in the metal wire by driving a second terminal of the metal wire with a second voltage whose level is different from that of the first voltage.
A system for performing a burn-in test of a semiconductor memory device, comprising:
- a metal wire;
- a first drive unit, coupled to a first terminal of the metal wire, configured to precharge the metal wire with a precharge voltage during a precharge period and drive the metal wire with an active voltage during an active period;
- and
- a second drive unit, coupled to a second terminal of the metal wire, configured to provide the metal wire with an error detection voltage in a burn-in test mode.
1 more element
Dependencies are inferred from the claim text.