Method for setting contact parameter and recording medium having program for setting contact parameter recorded thereon
AssigneeTokyo Electron Limited
InventorKazunari ISHII
Life of this patent
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AssigneeTokyo Electron Limited
InventorKazunari ISHII
Estimating the term…
Disclosed is a method to set contact parameters, which can simulate the entire contact process of devices of a semiconductor wafer with probes while visually checking the contact parameters. The method includes preparing a coordinate graph including a time axis and a height axis, and setting contact parameters of the semiconductor wafer by specifying a plurality of points on the coordinate graph by a plurality of upward/downward movement positions of the semiconductor wafer during electrical contact of the electrode pads of the semiconductor wafer with the plurality of probes or separation of the electrode pads of the semiconductor wafer from the plurality of probes, and time required for the semiconductor wafer to move until reaching the upward/downward movement positions, respectively, and displaying a broken-line graph through connecting the specified points with straight-lines.
A method to set contact parameters for relative movement of a semiconductor wafer and a plurality of probes with respect to each other in order to perform an electrical property test on devices formed on the semiconductor wafer through an electrical contact between electrode pads of the devices and the plurality of probes, the method comprising:
A method to set contact parameters for contacting a semiconductor wafer with a plurality of probes and separating the semiconductor wafer from the plurality of probes by moving a semiconductor wafer in order to perform an electrical property test on devices formed on the semiconductor wafer through an electrical contact between electrode pads of the devices and the plurality of probes, the method comprising:
A method to set contact parameters for contacting a semiconductor wafer with a plurality of probes and separating the semiconductor wafer from the plurality of probes by moving up and down the semiconductor wafer in order to perform an electrical property test on devices formed on the semiconductor wafer through an electrical contact between electrode pads of the devices and the plurality of probes, the method comprising:
Dependencies are inferred from the claim text.