Hall effect ion ejection device

A Hall effect plasma thruster comprising:

• a main ionization and acceleration annular channel, the annular channel being open at its end;
• an anode located inside the channel;
• a cathode located outside the channel;
• and
• a magnetic field being in at least a portion of the annular channel, the circuit comprising an annular inner wall, an annular outer wall and a surface connecting the inner and outer walls,
• wherein the magnetic circuit generates a magnetic field independent of azimuth at the outlet of the annular channel and in the area of the anode, a radial component of the magnetic field is substantially zero;
• and
• wherein Hall effect ion ejection causes plasma thrust.

A Hall effect ion ejection apparatus comprising:

• a main ionization and acceleration annular channel, the annular channel being open at its end;
• an anode located inside the channel;
• a cathode located outside the channel;
• and
• a magnetic field being in at least a portion of the annular channel, the circuit comprising an annular inner wall, an annular outer wall and a surface connecting the inner and outer walls,
• wherein the magnetic circuit generates a magnetic field independent of azimuth at the outlet of the annular channel and in the area of the anode, a radial component of the magnetic field is substantially zero;
• and
• wherein the Hall effect ion ejection causes a surface treatment by ion implantation.