Method of measurement in semiconductor fabrication
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAlex Hsu, Shih-Chi Fu, Feng-Jia Shiu, Chia-Shiung Tsai
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Abstract
Provided is a method of fabricating a semiconductor device. The method includes providing a device substrate having a front side and a back side, the device substrate having a first refractive index, forming an embedded target over the front side of the device substrate, forming a reflective layer over the embedded target, forming a media layer over the back side of the device substrate, the media layer having a second refractive index less than the first refractive index, and projecting radiation through the media layer and the device substrate from the back side so that the embedded target is detected for a semiconductor process.
Claims20
A method, comprising:
- providing a device substrate having a front side and a back side, the device substrate having a first refractive index;
- forming an embedded target over the front side of the device substrate;
- forming a reflective layer over the embedded target;
- forming a media layer over the back side of the device substrate, the media layer having a second refractive index less than the first refractive index;
- and
- projecting radiation through the media layer and the device substrate from the back side so that the embedded target is detected for a semiconductor process.
A semiconductor device, comprising:
- a device substrate having a front side and a back side, the device substrate having a first refractive index;
- an embedded target formed over the front side of the device substrate;
- a reflective layer formed over the embedded target, the reflective layer being capable of reflecting radiation projected from the back side of the device substrate;
- and
- a media layer formed over the back side of the device substrate, the media layer having a second refractive index less than the first refractive index.
A method of semiconductor fabrication, comprising:
- providing a device substrate having a front side and a back side, the device substrate having a first refractive index and a scribe line region;
- forming an embedded mark in a gate layer over the front side of the device substrate, the embedded mark being formed within the scribe line region;
- forming a reflective layer within an interconnect structure;
- bonding a carrier substrate to the front side of the device substrate;
- thinning the device substrate from the back side;
- forming a media layer over the back side of the thinned device substrate, the media layer having a second refractive index less than the first refractive index and greater than a refractive index of air;
- and
- projecting radiation through the media layer and the device substrate from the back side so that the embedded mark is detected for a semiconductor process.
Dependencies are inferred from the claim text.