Semiconductor device and method of manufacturing the same
AssigneeNEC Electronics Corporation
InventorHirofumi Fukuda
Life of this patent
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Abstract
In a semiconductor device, corner portions of a inner insulating film are chamfered, and hence a damage is less likely to reach the corner portion of the inner insulating film, though the corner portion of an outer insulating film is damaged. Therefore, a hermeticity of a semiconductor element can be effectively maintained, and the yield of semiconductor pellets can be improved. Moreover, since it is not necessary to chamfer the corner portion of the outer insulating film, the structure remains simple and the productivity can be improved.
Claims7
A semiconductor device, comprising:
- a wafer substrate;
- a plurality of semiconductor elements disposed in a row on the wafer substrate;
- a first insulating film provided on the wafer substrate so as to hermetically enclose each of the semiconductor element;
- and
- a second insulating film provided on the wafer substrate so as to hermetically enclose the first insulating film;
- wherein the first insulating film is of a polygonal plan-view shape with each corner chamfered.
A method of manufacturing a semiconductor device, comprising:
- forming a plurality of semiconductor elements in a row on a surface of a wafer substrate, each on a region to be formed into a pellet;
- forming a first insulating film in a polygonal plan-view shape with each corner portion chamfered, on the surface of the wafer substrate so as to hermetically enclose the semiconductor element;
- and
- forming a second insulating film in a row, with the scribe region disposed between the second insulating films on the surface of the wafer substrate so as to hermetically enclose the first insulating film.
Dependencies are inferred from the claim text.