Interconnect structure for a semiconductor device and related method of manufacture

A semiconductor device structure having a device substrate, the semiconductor device structure comprising:

• an electrically-conductive contact pad formed overlying the device substrate;
• a resilient block disposed on the contact pad, the resilient block adapted to elastically deform in response to a force;
• an electrically-conductive platform substantially surrounding the resilient block, the platform coupled to the resilient block and electrically coupled to the contact pad;
• an electrically-conductive pillar interconnect disposed above, and electrically coupled to, the platform, the pillar interconnect extending to a termination end;
• and
• a solder bead formed on the termination end.

A method of forming a contact platform for a device substrate, the method comprising:

• providing a semiconductor device structure having an electrically-conductive contact element, a passivation layer atop the electrically-conductive contact element, and a recess extending through the passivation layer and terminating at the electrically-conductive contact element;
• at least partially filling the recess with a resilient material;
• selectively removing a portion of the resilient material to form a resilient pad, the resilient pad overlying the electrically-conductive contact element and spaced apart from the passivation layer;
• and
• forming an electrically-conductive platform such that the electrically-conductive platform at least partially surrounds the resilient pad.