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US 2010/0244265 A1Published application
Semiconductor device and method for manufacturing the same
AssigneePanasonic Corporation
InventorShuji Hirao
Life of this patent
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Abstract
Wiring grooves are formed on a first interlayer insulating film 2 on a semiconductor substrate 1; first Cu wires 5 are formed by stacking first Cu films 4 in the wiring grooves; a first liner film 6 is formed on the first Cu wires 5 and the first interlayer insulating film 2; openings 13 are partially formed on the first Cu wires 5 so as to expose the surfaces of the first Cu wires 5 on the first liner film 6; and cap metal films 7 are formed on the surfaces of the first Cu wires 5 exposed in the openings 13.
Claims15
A semiconductor device comprising:
- a plurality of wires provided on an interlayer insulating film on a semiconductor substrate;
- and
- cap metal films formed on top surfaces of the wires,
- wherein the cap metal film is partially formed on the top surface of the wire.
1 more element
A method for manufacturing a semiconductor device, comprising:
- (a) forming a plurality of wiring grooves on a first insulating film on a semiconductor substrate;
- (b) forming a plurality of wires by stacking conductive films in the plurality of wiring grooves after (a);
- (c) forming a second insulating film on the wires and the first insulating film after (b);
- (d) partially forming a plurality of openings on the wires so as to expose surfaces of the wires on the second insulating film after (c);
- and
- (e) forming cap metal films on the wire surfaces exposed in the openings after (d).
3 more elements
Dependencies are inferred from the claim text.