Deposition method and a deposition apparatus of fine particles, a forming method and a forming apparatus of carbon nanotubes, and a semiconductor device and a manufacturing method of the same

A forming method of carbon nanotubes, comprising the steps of:

• irradiating a fine particle beam formed by size-classified catalyst fine particles to an irradiated subject under a vacuum state;
• depositing the fine particles on a bottom part of a groove structure formed at the irradiated subject;
• and
• generating a carbon nanotube from the bottom part by using the catalyst fine particles as catalysts.

A forming method of carbon nanotubes, comprising the steps of:

• generating catalyst fine particles;
• size-classifying the catalyst fine particles to desired fine diameters;
• irradiating a fine particle beam formed by the size-classified catalyst fine particles to an irradiated subject under a vacuum state, so that the catalyst fine particles are deposited on a bottom part of a groove structure formed at the irradiated subject;
• and
• generating a carbon nanotube from the bottom part by using one of the catalyst fine particles as a catalyst.

A forming method of carbon nanotubes, comprising the steps of:

• generating catalyst fine particles;
• depositing the catalyst fine particles on a substrate;
• and
• generating the carbon nanotube by using one of the catalyst fine particles as a catalyst;
• wherein each step is continuously performed under a designated environment cut off from the outside.

A forming apparatus of carbon nanotubes, comprising:

• a fine particle generation part configured to generate fine particles;
• a deposition part configured to deposit the catalyst fine particles on a substrate;
• and
• a tube generation part configured to generate a carbon nanotube by using one of the catalyst fine particles as a catalyst;
• wherein a series of processes from generation of the catalyst fine particles to generation of the carbon nanotubes is continuously performed under a designated environment cut off from the outside.

A semiconductor device, comprising:

• a first conductive part;
• an interlayer insulating layer which covers the first conductive part;
• a second conductive part which is formed on the interlayer insulating layer;
• a groove part which pierces the inter layer insulating layer and exposes the first conductive layer;
• wherein the groove part includes a catalyst layer and a carbon nanotube,
• the catalyst layer is formed on a surface of the first conductive part, and
• the carbon nanotube is formed on the catalyst layer and electrically connects the first conductive layer and the second conductive layer;
• and
• the catalyst layer is formed by fine particles.

A semiconductor device, comprising:

• a substrate;
• an insulating layer formed on a main surface of the substrate;
• two catalyst layers formed on the insulating layer isolated from each other;
• a carbon nanotube formed between the two catalyst layers;
• a first conductive part and a second conductive part each of which covers a separate one of the catalyst layers;
• and
• a third conductive part formed on a back surface of the substrate,
• wherein an electric current flowing in the carbon nanotube is controlled by an electric voltage and an electric current applied to the third conductive part, and
• each of the catalyst layers is formed by fine particles.

A manufacturing method of a semiconductor device, the semiconductor device including

• a first conductive part;
• an interlayer insulating layer which covers the first conductive part;
• a second conductive part which is formed on the interlayer insulating layer;
• and
• a groove part which pierces the inter layer insulating layer and exposes the first conductive layer;
• wherein the groove part includes a catalyst layer and a carbon nanotube,
• the catalyst layer is formed on a surface of the first conductive part, and
• the carbon nanotube is formed on the catalyst layer and electrically connects the first conductive layer and the second conductive layer;
• the manufacturing method comprising the steps of:
• forming a groove which exposes the first conductive part by selectively etching the interlayer insulating layer;
• forming the catalyst layer which is formed by fine particles on a surface of the first conductive part in the groove part;
• and
• forming the carbon nanotube by using one of the fine particles as a catalyst.

A manufacturing method of a semiconductor device, the semiconductor device including

• a substrate;
• an insulating layer formed on a main surface of the substrate;
• a first conductive part and a second conductive part formed on the insulating layer isolated from each other;
• a carbon nanotube formed between the first conductive part and the second conductive part;
• and
• a third conductive part formed on a back surface of the substrate;
• wherein an electric current flowing in the carbon nanotube is controlled by an electric voltage and an electric current applied to the third conductive part;
• the manufacturing method comprising the steps of:
• forming two catalyst layers, each of which is formed by the fine particles, on a surface of the insulating layer separated from each other;
• forming the carbon nanotube by using one of the fine particles as a catalyst, and
• forming the first conductive part and the second conductive part which respectively cover the two catalyst layers.