Through-hole contacts in a semiconductor device
AssigneeRound Rock Research, LLC
InventorNishant Sinha
Life of this patent
Estimating the term…
Abstract
Devices with conductive through-waver vias. In one embodiment, the device is formed by a method comprising providing a layer of semiconducting material, forming a layer of metal on a first side of the layer of semiconducting material, forming an opening in the layer of semiconducting material to thereby expose a portion of the layer of metal, the opening extending from at least a second side of the layer of semiconducting material to the layer of metal, and performing a deposition process to form a conductive contact in the opening using the exposed portion of the metal layer as a seed layer.
Claims16
A device, comprising:
- a semiconductor material having a first side and a second side;
- a first layer of conductive material positioned above the first side of the semiconductor material;
- a first integrated circuit device positioned above and conductively coupled to the first layer of conductive material;
- an opening in the semiconductor material that extends from the second side to the first side of the semiconductor material but not through the first layer of conductive material;
- a conductive contact positioned at least partially within the opening, the conductive contact being conductively coupled to the first layer of conductive material;
- and
- a second integrated circuit device positioned above the second side of the semiconductor material, the second integrated circuit device being conductively coupled to the conductive contact.
A device, comprising:
- a semiconductor material having a first side and a second side;
- a layer of insulating material on the first side of the semiconductor material;
- a first layer of conductive material on the layer of insulating material;
- a first integrated circuit device positioned above and conductively coupled to the first layer of conductive material;
- an opening in the semiconductor material that extends from the second side to the first side of the semiconductor material but not through the first layer of conductive material;
- a conductive contact positioned at least partially within the opening, the conductive contact being conductively coupled to the first layer of conductive material;
- a barrier metal layer positioned in the opening between the conductive contact and the semiconductor material;
- and
- a second integrated circuit device positioned above the second side of the semiconductor material, the second integrated circuit device being conductively coupled to the conductive contact.
Dependencies are inferred from the claim text.