Substrate and manufacturing method therefor
AssigneeNippon Mining & Metals Co., Ltd.
InventorsJunichi Ito, Atsushi Yabe, Junnosuke Sekiguchi, Toru Imori
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AssigneeNippon Mining & Metals Co., Ltd.
InventorsJunichi Ito, Atsushi Yabe, Junnosuke Sekiguchi, Toru Imori
Estimating the term…
It is an object of the present invention to provide a substrate having a barrier film for preventing copper diffusion having both a barrier function and a catalytic function, wherein the barrier properties during high-temperature heating is excellent. A substrate having, on a base material, a barrier film for preventing copper diffusion comprising one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as ruthenium, rhodium, and iridium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The said barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.
A substrate having, on a base material, a barrier film comprising a single layer combining both a barrier function and a catalytic function, the barrier film is a barrier film for preventing copper diffusion comprising one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium.
A substrate manufacturing method wherein a barrier film for preventing copper diffusion comprising one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium is formed on a base material by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and a metal element having a catalytic function in electroless plating, and wherein the barrier film for preventing copper diffusion consists of a single layer.
Dependencies are inferred from the claim text.