Semiconductor device and manufacturing method thereof

A method of manufacturing a semiconductor device, comprising:

• forming an interlayer insulating film above a semiconductor substrate;
• forming a concave portion in the interlayer insulating film;
• forming a barrier metal layer along a bottom and a sidewall of the concave portion, comprising:
• forming a first titanium nitride film whose titanium content in all components except oxygen and a noble metal component is more than 50 at %, and
• forming a second titanium nitride film whose titanium content in all components except oxygen and a noble metal component is larger than the titanium content of the first titanium nitride film or a titanium film so as to form the second titanium nitride film or the titanium film relatively more along the bottom than along the sidewall;
• and
• forming a metal wiring layer in the concave portion via the barrier metal layer.

A method of manufacturing a semiconductor device, comprising:

• forming an interlayer insulating film above a semiconductor substrate;
• forming a concave portion in the interlayer insulating film;
• forming a barrier metal layer along a bottom and a sidewall of the concave portion, comprising:
• forming a titanium nitride film whose titanium content in all components except oxygen and a noble metal component is more than 50 at % or a titanium film, and
• nitriding the titanium nitride film or the titanium film by using at least one selected from a nitrogen ion and a nitrogen radical so as to nitride the titanium nitride film or the titanium film formed along the sidewall relatively more than the titanium nitride film or the titanium film formed along the bottom;
• and
• forming a metal wiring layer in the concave portion via the barrier metal layer.