US 2010/0244253 A1 · COPPER LINE HAVING SELF-ASSEMBLED MONOLAYER FOR ULSI SEMICONDUCTOR DEVICES, AND A METHOD OF FORMING SAME

Abstract

A copper line having self assembled monolayer for use in ULSI semiconductor devices and methods of making the same are presented. The copper line includes an interlayer dielectric, a self-assembled monolayer, catalytic particles on the monolayer, and a copper layer on the monolayer with the catalytic particles. The method includes the steps of forming an interlayer dielectric on a semiconductor substrate having a metal line forming region; forming a self-assembled monolayer on the metal line forming region; adsorbing catalytic particles on the self-assembled monolayer; forming using an electroless process a copper seed layer on the self-assembled monolayer having the catalytic particles adsorbed thereto; and forming a copper layer on the copper seed layer to fill in the metal line forming region.

Claims43

Dependent claims

A method for forming a self-assembled monolayer, comprising the steps of:

modifying a surface of a semiconductor substrate to form hydrogen groups bonded at the surface of the semiconductor;
flowing Cl2 gas and irradiating UV onto the semiconductor substrate having undergone surface modification so as to substitute chlorine groups for the hydrogen groups are bonded at the surface of the semiconductor substrate;
and
flowing NH3 gas onto the surface of the having the chlorine groups bonded at the surface of the semiconductor substrate so as to substitute amine groups for the chlorine groups bonded to the surface of the semiconductor substrate.

1 more element

A method for forming a copper line of a semiconductor device, comprising the steps of:

forming an interlayer dielectric on a semiconductor substrate having a metal line forming region;
forming a self-assembled monolayer on the interlayer dielectric and on a surface of the metal line forming region;
adsorbing catalytic particles on a surface of the self-assembled monolayer;
forming a copper seed layer on the self-assembled monolayer having the catalytic particles adsorbed thereto by using an electroless plating technique;
and
forming a copper layer on the copper seed layer to substantially fill in the metal line forming region.

3 more elements

Dependencies are inferred from the claim text.

Copper line having self-assembled monolayer for ulsi semiconductor devices, and a method of forming same

Life of this patent

Copper line having self-assembled monolayer for ulsi semiconductor devices, and a method of forming same

Life of this patent

Abstract

Claims43