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US 2010/0244251 A1Published application
Semiconductor device and method for fabricating the same
AssigneePanasonic Corporation
InventorsNaoki TORAZAWA, Toru Hinomura
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Abstract
A semiconductor device includes a first semiconductor chip, an electrode pad formed in an upper surface portion of the first semiconductor chip, a second semiconductor chip formed on the first semiconductor chip, and a through-via formed in the second semiconductor chip. A hollowed portion is formed in the electrode pad, and a bottom portion of the through-via is embedded in the hollowed portion.
Claims32
A semiconductor device comprising:
- a first semiconductor chip;
- an electrode pad formed in an upper surface portion of the first semiconductor chip;
- a second semiconductor chip formed on the first semiconductor chip;
- and
- a through-via formed in the second semiconductor chip,
- wherein
- a hollowed portion is formed in the electrode pad, and a bottom portion of the through-via is embedded in the hollowed portion.
4 more elements
A method for fabricating a semiconductor device, comprising the steps of:
- (a) preparing a first semiconductor chip including an electrode pad in an upper surface portion thereof, and a second semiconductor chip;
- (b) attaching the second semiconductor chip to an upper surface of the first semiconductor chip;
- (c) forming a through-via hole in the second semiconductor chip;
- (d) after steps (b) and (c), forming a hollowed portion in the electrode pad;
- and
- (e) forming a through-via by embedding a conductive film in the through-via hole and the hollowed portion.
3 more elements
A method for fabricating a semiconductor device, comprising the steps of:
- (a) preparing a first semiconductor chip including an electrode pad in an upper surface portion thereof, and a second semiconductor chip;
- (b) forming a through-via in the second semiconductor chip;
- (c) forming a metal-containing film in a bottom portion of the through-via;
- and
- (d) attaching the second semiconductor chip to an upper surface of the first semiconductor chip, and causing the metal-containing film formed in the bottom portion of the through-via to contact the electrode pad.
2 more elements
Dependencies are inferred from the claim text.