Nonvolatile memory device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorHiroyuki Fukumizu
Life of this patent
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Abstract
A nonvolatile memory device, includes: a lower side electrode aligned in a first direction; an upper side electrode positioned above the lower side electrode and aligned in a second direction intersecting the first direction; and a memory unit provided between the lower side electrode and the upper side electrode. At least one selected from the lower side electrode and the upper side electrode includes a first electrode and a second electrode, the first electrode having a forward-tapered side wall, the second electrode having a reverse-tapered side wall and being adjacent to the first electrode via an insulating layer in substantially identical plane.
Claims20
A nonvolatile memory device, comprising:
- a lower side electrode aligned in a first direction;
- an upper side electrode positioned above the lower side electrode and aligned in a second direction intersecting the first direction;
- and
- a memory unit provided between the lower side electrode and the upper side electrode,
- at least one selected from the lower side electrode and the upper side electrode including a first electrode and a second electrode, the first electrode having a forward-tapered side wall, the second electrode having a reverse-tapered side wall and being adjacent to the first electrode via an insulating layer in substantially identical plane.
A method for manufacturing a nonvolatile memory device, the device including a lower side electrode aligned in a first direction, an upper side electrode positioned above the lower side electrode and aligned in a second direction intersecting the first direction, and a memory unit provided between the lower side electrode and the upper side electrode, the method comprising:
- manufacturing at least one selected from the lower side electrode and the upper side electrode,
- the manufacturing at least the one selected from the lower side electrode and the upper side electrode including:
- forming a plurality of first electrodes having band configurations disposed in parallel;
- forming each of a plurality of insulating layers on each of side faces of the plurality of first electrodes;
- and
- filling a conductor between the insulating layers adjacent to each other to form a second electrode.
A method for manufacturing a nonvolatile memory device, the device including a lower side electrode aligned in a first direction, an upper side electrode positioned above the lower side electrode and aligned in a second direction intersecting the first direction, and a memory unit provided between the lower side electrode and the upper side electrode, the method comprising:
- manufacturing at least the one selected from the lower side electrode and the upper side electrode,
- the manufacturing at least the one selected from the lower side electrode and the upper side electrode including:
- forming a plurality of sacrificial layers having band configurations disposed in parallel;
- forming each of a plurality of insulating layers on each of side faces of the plurality of sacrificial layers;
- removing the plurality of sacrificial layers;
- and
- filling a conductor between the insulating layers adjacent to each other.
Dependencies are inferred from the claim text.