Semiconductor Device and Method of Forming Enhanced UBM Structure for Improving Solder Joint Reliability

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first insulating layer over the substrate;
• forming a first conductive layer over the first insulating layer;
• forming an under bump metallization (UBM) build-up structure over the first conductive layer;
• and
• forming a solder bump over the first conductive layer and UBM build-up structure.

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first insulating layer over the substrate;
• forming a first conductive layer over the first insulating layer;
• forming an under bump metallization (UBM) build-up structure over the first conductive layer;
• and
• forming an interconnect structure over the first conductive layer and UBM build-up structure.

A semiconductor device, comprising:

• a substrate;
• a first insulating layer formed over the substrate;
• a first conductive layer formed over the first insulating layer;
• an under bump metallization (UBM) build-up structure formed over the first conductive layer;
• and
• an interconnect structure formed over the first conductive layer and UBM build-up structure.