Semiconductor Device and Method of Forming a Shielding Layer Between Stacked Semiconductor Die

A method of manufacturing a semiconductor device, comprising:

• providing a first semiconductor die having an active surface;
• forming a first shielding layer over a back surface of the first semiconductor die opposite its active surface;
• providing a second semiconductor die having an active surface;
• forming a second shielding layer over a back surface of the second semiconductor die opposite its active surface;
• mounting the second semiconductor to the first semiconductor by bonding the second shielding layer to the first shielding layer;
• depositing a first insulating layer over the first and second semiconductor die;
• forming a first interconnect structure over the second semiconductor die and first insulating layer;
• and
• forming a second interconnect structure over the first semiconductor die and first insulating layer.

A method of manufacturing a semiconductor device, comprising:

• disposing a first shielding layer between the first and second semiconductor;
• depositing a first insulating layer over the first and second semiconductor die;
• and
• forming a first interconnect structure over the second semiconductor die and first insulating layer.

A semiconductor device, comprising:

• first and second stacked semiconductor die;
• a first shielding layer disposed between the first and second stacked semiconductor;
• a first insulating layer deposited over the first and second semiconductor die;
• a first interconnect structure formed over the second semiconductor die and first insulating layer;
• and
• a second interconnect structure formed over the first semiconductor die and first insulating layer, the first shielding layer being electrically connected to the second interconnect structure.