Multiple thickness and/or composition high-k gate dielectrics and methods of making thereof
AssigneeToshiba America Electronic Components, Inc.
InventorMariko Takayanagi
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Abstract
Disclosed are methods of making an integrated circuit with multiple thickness and/or multiple composition high-K gate dielectric layers and integrated circuits containing multiple thickness and/or multiple composition high-K gate dielectrics. The methods involve forming a layer of high-K atoms over a conventional gate dielectric and heating the layer of high-K atoms to form a high-K gate dielectric layer. Methods of suppressing gate leakage current while mitigating mobility degradation are also described.
Claims22
A method of making an integrated circuit with at least one of multiple thickness high-K gate dielectric layers or multiple composition high-K gate dielectric layers, comprising:
- forming a conventional gate dielectric layer having a first thickness in a first portion of a substrate and a second thickness in a second portion of the substrate, the first thickness greater than the second thickness;
- forming a layer of high-K atoms over the conventional gate dielectric;
- heating the layer of high-K atoms, the conventional gate dielectric layer, and the substrate to form a high-K gate dielectric layer, the high-K gate dielectric layer having at least one of a first thickness or a first composition in the first portion and at least one of a second thickness or a second composition in the second portion, the first thickness greater than the second thickness.
A method of making an integrated circuit with multiple thickness high-K gate dielectric layers, comprising:
- forming a conventional gate dielectric layer having a first thickness in a first portion of a substrate, a second thickness in a second portion of the substrate, and a third thickness in a third portion of the substrate, the first thickness greater than the second thickness and the second thickness greater than the third thickness;
- forming a layer of high-K atoms over the conventional gate dielectric;
- heating the layer of high-K atoms, the conventional gate dielectric layer, and the substrate to form a high-K gate dielectric layer, the high-K gate dielectric layer having a first thickness in the first portion, a second thickness in the second portion, and a third thickness in the third portion, the first thickness greater than the second thickness and the second thickness greater than the third thickness.
An integrated circuit, comprising:
- a first set of transistors over a first portion of a substrate, a second set of transistors over a second portion of the substrate;
- each of the first set of transistors comprising a gate, a high-K gate dielectric, and a conventional gate dielectric and each of the second set of transistors comprising a gate, a high-K gate dielectric, and optionally a conventional gate dielectric;
- the first set of transistors comprising a high-K gate dielectric of at least one of a first thickness or a first composition, and the second set of transistors comprising a high-K gate dielectric of at least one of a second thickness or a second composition, the first thickness greater than the second thickness and the first composition different from the second composition;
- and
- the high-K gate dielectric of the first set of transistors and the second set of transistors comprises one or more of HfxSi1-xO2, HfxSi1-xON, ZrxSi1-xO2, ZrxSi1-xON, LaxSi1-xO2, LaxSi1-xON, GdxSi1-xO2, or GdxSi1-xON, where x is between 0 and 1.
Dependencies are inferred from the claim text.