Film forming method, film forming apparatus, storage medium and semiconductor device

A film forming method comprising:

• mounting a substrate to be subjected to a film forming process on a mounting unit in a processing vessel;
• introducing a plasma generating gas from an upper portion of the processing vessel;
• vacuum-exhausting an inside of the processing vessel from a lower side below the substrate;
• introducing a C5F8 gas into the processing vessel from between a position corresponding to a height at which the plasma generating gas is introduced and a position corresponding to a height of the substrate;
• introducing a hydrogen gas into the processing vessel;
• and
• converting the C5F8 gas and the hydrogen gas into a plasma by supplying a microwave into the processing vessel from a planar antenna member installed at the upper portion of the processing vessel to face the mounting table and provided with a number of slits along a circumferential direction.

A film forming apparatus comprising:

• an airtightly sealed processing vessel including therein a mounting unit for mounting a substrate thereon;
• a unit for supplying a C5F8 gas into the processing vessel;
• a unit for supplying a hydrogen gas into the processing vessel;
• a plasma generating unit for supplying an energy to the C5F8 gas and the hydrogen gas to convert the gases into a plasma;
• a unit for vacuum-evacuating an inside of the processing vessel;
• and
• a control unit for outputting a control instruction to each unit to introduce the C5F8 gas and the hydrogen gas into the processing vessel and to convert the gases into the plasma.