Semiconductor structure having a protective layer
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorChantal Arena
Life of this patent
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Abstract
A semiconductor structure includes a substrate having a first nitride-based semiconductor layer. A pseudomorphic protective layer is formed on the first nitride-based semiconductor layer and a second nitride-based semiconductor layer is formed on the pseudomorphic protective layer. The pseudomorphic protective layer has a thickness that is less than a critical thickness so that it drives the material quality of the second nitride-based semiconductor layer to correspond with that of the first nitride-based semiconductor layer.
Claims20
A semiconductor structure, comprising:
- a substrate which includes a first nitride-based semiconductor layer;
- a pseudomorphic protective layer formed on the first nitride-based semiconductor layer, the pseudomorphic protective layer having a thickness that is less than a critical thickness;
- and
- a second nitride-based semiconductor layer formed on the pseudomorphic protective layer.
A semiconductor structure, comprising:
- a substrate which includes a first nitride-based semiconductor layer;
- a pseudomorphic protective layer formed on the first nitride-based semiconductor layer, wherein the thickness of the pseudomorphic protective layer is chosen so that its material quality is driven to correspond with that of the first nitride-based semiconductor layer;
- and
- a second nitride-based semiconductor layer formed on the pseudomorphic protective layer, wherein the pseudomorphic protective layer drives the material quality of the second nitride-based semiconductor layer to correspond with that of the first nitride-based semiconductor layer.
A method of fabricating a semiconductor structure, comprising:
- providing a support structure which carries a first nitride-based semiconductor layer;
- forming a pseudomorphic protective layer on the first nitride-based semiconductor layer, wherein the pseudomorphic protective layer has a thickness which is less than a critical thickness;
- and
- forming a second nitride-based semiconductor layer on the pseudomorphic protective layer, wherein the pseudomorphic protective layer drives the material quality of the second nitride-based semiconductor layer to correspond with that of the first nitride-based semiconductor layer.
Dependencies are inferred from the claim text.