Semiconductor device and fabrication method of the semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsKen ONODERA, Kazutaka Takagi
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Abstract
A semiconductor device and its manufacturing method, the semiconductor device comprising: a semi-insulating substrate 11 in which an electrode (12) is formed on a surface (11a) of one side and in which an aperture (11c) passed through from the surface 11a of one side to a surface (11b) of another side is formed; and a conductive layer (17) formed in an inner surface of the aperture (11c), and electrically connected with the electrode (12); wherein the aperture (11c) has a tapered region (11d) where an inside diameter of a part located in the surface (11b) of another side is larger than an inside diameter of a part located in the surface (11a) of one side.
Claims1
A semiconductor device comprising:
- a semi-insulating substrate composed of GaN or SiC in which an electrode is formed on a surface of one side and in which a VIA hole passed through from the surface of one side to a surface of another side is formed;
- and
- a conductive layer formed in an inner surface of the VIA hole, and electrically connected with the electrode, wherein
- an inside diameter of a part located in the surface of the another side of the VIA hole is larger than an inside diameter of a part located in the surface of one side.
Dependencies are inferred from the claim text.