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US 2010/0244199 A1Published application
Semiconductor device and method for manufacturing semiconductor device
AssigneeFujitsu Microelectronics Limited
InventorsJun Sakuma, Hideaki Matsumura, Tadashi Ohshima
Life of this patent
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Abstract
A semiconductor device includes a first moisture-resistant ring disposed in a peripheral region surrounding a circuit region on a semiconductor substrate in such a way as to surround the circuit region and a second moisture-resistant ring disposed in the peripheral region in such a way as to surround the first moisture-resistant ring.
Claims18
A semiconductor device comprising:
- a first moisture-resistant ring disposed in a peripheral region surrounding a circuit region on a semiconductor substrate in such a way as to surround the circuit region;
- and
- a second moisture-resistant ring disposed in the peripheral region in such a way as to surround the first moisture-resistant ring,
- wherein the first moisture-resistant ring has
- a first pattern buried in a first insulating layer disposed on the semiconductor substrate,
- a second pattern, which is buried in a second insulating layer disposed on the first insulating layer, which is connected to the first pattern, and which has a width smaller than the width of the first pattern, and
- a third pattern, which is disposed on the second insulating layer, which is connected to the second pattern, and in which at least one of two side portions along a longitudinal direction do not overlap the first pattern two-dimensionally, and
- the second moisture-resistant ring has
- a fourth pattern buried in the first insulating layer,
- a fifth pattern, which is buried in the second insulating layer, which is connected to the fourth pattern, and which has a width smaller than the width of the fourth pattern, and
- a sixth pattern, which is disposed on the second insulating layer, which is connected to the fifth pattern, in which at least one of two side portions along the longitudinal direction do not overlap the fourth pattern, and which is isolated from the third pattern two-dimensionally.
8 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a first insulating layer on a semiconductor substrate;
- forming a first groove, which surrounds a circuit region on the semiconductor substrate, and a second groove, which surrounds the first groove, in the first insulating layer in a peripheral region surrounding the circuit region;
- burying a first pattern, which serves as a part of a first moisture-resistant ring, into the first groove and burying a second pattern, which serves as a part of a second moisture-resistant ring, into the second groove;
- forming a second insulating layer on the first insulating layer, the first pattern, and the second pattern;
- forming a third groove, which reaches the first pattern and which has a width smaller than that of the first pattern, and a fourth groove, which reaches the second pattern and which has a width smaller than that of the second pattern, in the second insulating layer;
- burying a third pattern, which serves as a part of the first moisture-resistant ring, into the second groove and burying a fourth pattern, which serves as a part of the second moisture-resistant ring, into the fourth groove;
- and
- forming a fifth pattern, which is connected to the third pattern, in which at least one of two side portions along the longitudinal direction do not overlap the first pattern two-dimensionally, and which serves as a part of the first moisture-resistant ring, and in addition, forming a sixth pattern, which is connected to the fourth pattern, in which at least one of two side portions along the longitudinal direction do not overlap the second pattern two-dimensionally, which serves as a part of the second moisture-resistant ring, and which is isolated from the fifth pattern, on the second insulating layer.
5 more elements
Dependencies are inferred from the claim text.