Group III nitride semiconductor composite substrate, group III nitride semiconductor substrate, and group III nitride semiconductor composite substrate manufacturing method
AssigneeHitachi Cable, Ltd.
InventorTakehiro Yoshida
Life of this patent
Estimating the term…
Abstract
A group III nitride semiconductor composite substrate includes a substrate composed of a conductive material having a melting point of not less than 100° C., a group III nitride layer provided on the substrate, and a group III nitride single crystal film provided on the group III nitride layer. The group III nitride layer includes an undulation including a periodic roughness in a surface of the group III nitride layer contacted with the group III nitride single crystal film. The undulation includes a 1-dimensional power spectral density of less than 500 nm3 in the spatial wavelength region of not less than 0.1 (/μm) and less than 1 (/μm).
Claims7
A group III nitride semiconductor composite substrate, comprising:
- a substrate comprising a conductive material having a melting point of not less than 1100° C.;
- a group III nitride layer provided on the substrate;
- and
- a group III nitride single crystal film provided on the group III nitride layer, wherein the group III nitride layer comprises an undulation comprising a periodic roughness in a surface of the group III nitride layer contacted with the group III nitride single crystal film, and
- the undulation comprises a 1-dimensional power spectral density of less than 500 nm3 in a spatial wavelength region of not less than 0.1 (/μm) and less than 1 (/μm).
A group III nitride semiconductor substrate, comprising:
- a frontside surface and a backside surface,
- wherein either or both of the frontside surface and the backside surface comprise an undulation comprising a periodic roughness, and
- the undulation comprises a 1-dimensional power spectral density of less than 500 nm3 in a spatial wavelength region of not less than 0.1 (/μm) and less than 1 (/μm).
A group III nitride semiconductor composite substrate manufacturing method, comprising:
- preparing a substrate comprising a group III nitride layer;
- grinding a surface of the group III nitride layer of the substrate;
- preparing a group III nitride single crystal;
- grinding a surface of the group III nitride single crystal;
- implanting atoms from a surface of the group III nitride single crystal into the group III nitride single crystal, to thereby form a damaged layer inside the group III nitride single crystal;
- and
- fusing the ground surface of the group III nitride layer of the substrate, and the ground surface of the group III nitride single crystal,
- wherein the ground surface of the group III nitride layer, and the ground surface of the group III nitride single crystal each comprise an undulation comprising a periodic roughness, and
- the undulation comprises a 1-dimensional power spectral density of less than 500 nm3 in a spatial wavelength region of not less than 0.1 (/μm) and less than 1 (/μm).
Dependencies are inferred from the claim text.