Back to results
US 2010/0244194 A1Published application
Semiconductor device and manufacturing method thereof
AssigneePanasonic Corporation
InventorsAtsuya MASADA, Mitsuo Horie
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprising: a semiconductor substrate having a first conductive type layer; a first diffusion region which has the first conductive type and is formed in the first conductive type layer; a second diffusion region which has a second conductive type and an area larger than an area of the first diffusion region and overlaps the first diffusion region; and a PN junction formed at an interface between the first and the second diffusion regions.
Claims16
A semiconductor device comprising:
- a semiconductor substrate having a first conductive type layer;
- a first diffusion region which has the first conductive type and is formed in the first conductive type layer;
- a second diffusion region which has a second conductive type and an area larger than an area of the first diffusion region and overlaps the first diffusion region;
- and
- a PN junction formed at an interface between the first and the second diffusion regions.
2 more elements
A manufacturing method of a semiconductor device comprising;
- preparing a semiconductor substrate having a first conductive type layer;
- doping a first conductive type impurity into the first conductive type layer so as to form a first diffusion region;
- and
- doping a second type impurity into the first conductive type layer so as to form a second diffusion region which has an area larger than an area of the first region and overlaps the first diffusion region,
- wherein a part of the first diffusion region is inverted from the first conductive type to the second conductive type by doping the second type impurity so as to form a PN junction.
2 more elements
Dependencies are inferred from the claim text.