Dielectric film and semiconductor device using dielectric film

A computer-readable storage medium storing a program for causing a computer to execute a method of forming a high dielectric film included in an MIS capacitor, wherein

• the method of forming includes:
• a first step of depositing, by physical vapor deposition using metallic targets of Hf and Al or Si, a dielectric film including a composite oxynitride containing an element A being Hf, an element B being Al or Si, and N and O, and whose mole fraction of the element A, the element B, and N expressed as B/(A+B+N) ranges from 0.015 to 0.095 and mole fraction of the element A, the element B, and N expressed as N/(A+B+N) equals or exceeds 0.045, on a silicon substrate having a silicon dioxide film;
• a second step of depositing a film selected from among a TiN film, Ti, TaN, W, Pt, Ru, Al, and Si on the dielectric film by physical vapor deposition using a metallic target;
• and
• a third step, after the first step or the second step, of performing an annealing treatment and crystallizing the dielectric film.

A computer-readable storage medium storing a program for causing a computer to execute a method of forming a high dielectric film included in a semiconductor device, wherein

• the method of forming includes:
• a first step of depositing, by CVD or ALD using a organic metallic material and an oxidant, a dielectric film including a composite oxynitride containing an element A being Hf, an element B being Al or Si, and N and O, and whose mole fraction of the element A, the element B, and N expressed as B/(A+B+N) ranges from 0.015 to 0.095 and mole fraction of the element A, the element B, and N expressed as N/(A+B+N) equals or exceeds 0.045, on a silicon substrate having a silicon dioxide film;
• and
• a second step, after the first step, of performing an annealing treatment and crystallizing the dielectric film.

A computer-readable storage medium storing a program for causing a computer to execute a method of forming a high dielectric film included in a semiconductor device, wherein

• the method of forming includes:
• a first step of forming an element isolation region on a silicon substrate by STI;
• a second step of forming a silicon dioxide film on the element-isolated silicon substrate by a thermal oxidation method;
• a third step of depositing, by, physical vapor deposition using metallic targets of Hf and Al or Si, a dielectric film including a composite oxynitride containing an element A being Hf, an element B being Al or Si, and N and O, and whose mole fraction of the element A, the element B, and N expressed as B/(A+B+N) ranges from 0.015 to 0.095 and mole fraction of the element A, element B, and N expressed as N/(A+B+N) equals or exceeds 0.045, on the silicon dioxide film;
• a fourth step of forming a gate electrode film on the dielectric film;
• a fifth step of processing the gate electrode film using lithography and RIE;
• a sixth step of performing ion implantation and forming an extension region using the processed gate electrode film as a mask;
• a seventh step of depositing a silicon nitride film and a silicon dioxide film on the silicon substrate on which the extension region has been formed;
• an eighth step of forming a gate sidewall by etching back the deposited silicon nitride film and silicon dioxide film;
• and
• a ninth step of performing ion implantation and forming a source-drain region under the extension region.

A computer-readable storage medium storing a program for causing a computer to execute a method of forming a non-volatile memory element or a FG non-volatile semiconductor element including a high dielectric film, wherein

• the method of forming includes:
• a first step of forming an element isolation region on a silicon substrate by STI;
• a second step of forming a first insulating film on the element-isolated silicon substrate by a thermal oxidation method;
• a third step of forming a second insulating film on the first insulating film by LPCVD;
• a fourth step of forming a third insulating film on the second insulating film using any of MOCVD, ALD, and PVD;
• a fifth step of forming, on the third insulating film, by a CVD method or an ALD method using an organic metallic material and an oxidant, a dielectric film including a composite oxynitride containing an element A being Hf, an element B being Al or Si, and N and O, and whose mole fraction of the element A, the element B, and N expressed as B/(A+B+N) ranges from 0.015 to 0.095 and mole fraction of the element A, the element B, and N expressed as N/(A+B+N) equals or exceeds 0.045;
• a sixth step of forming a fifth insulating film on the fourth insulating film using any of MOCVD, ALD, and PVD;
• a seventh step of forming a gate electrode film on the fifth insulating film;
• an eighth step of processing the gate electrode film using a lithographic technique and an RIE technique;
• a ninth step of performing ion implantation and forming an extension region using the processed gate electrode film as a mask;
• a tenth step of depositing a silicon nitride film and a silicon dioxide film on the silicon substrate on which the extension region has been formed;
• an eleventh step of forming a gate sidewall by etching back the deposited silicon nitride film and silicon dioxide film;
• and
• a twelfth step of performing ion implantation and forming a source-drain region under the extension region.

A computer-readable storage medium storing a program for causing a computer to execute a method of forming a DRAM including a high dielectric film, wherein

• the method of forming includes:
• a first step of forming an element isolation region on a silicon substrate by LOCOS or STI;
• a second step of forming a gate insulating film and a gate electrode film processed into a desired shape using lithography and RIE in an active region enclosed by the element isolation region;
• a third step of performing ion implantation and forming a diffusion region to become a source region or a drain region using the gate insulating film and the gate electrode film as a mask;
• a fourth step of forming a first interlayer insulating film on the silicon substrate by CVD;
• a fifth step of selectively etching the first interlayer insulating film and forming a first contact hole using lithography;
• a sixth step of forming a capacitor contact and a bit contact in the first contact hole so as to be connected to the diffusion region;
• a seventh step of forming a stopper insulating film and a second interlayer insulating film on the first interlayer insulating film by CVD;
• an eighth step of etching the second interlayer insulating film and forming a cylinder groove so as to expose the capacitor contact using lithography;
• a ninth step of forming a first electrode film in the cylinder groove by CVD or ALD;
• a tenth step of forming, by a CVD method or an ALD method using an organic metallic material and an oxidant, a dielectric film including a composite oxynitride containing an element A being Hf, an element B being Al or Si, and N and O, and whose mole fraction of the element A, the element B, and N expressed as B/(A+B+N) ranges from 0.015 to 0.095 and mole fraction of the element A, the element B, and N expressed as N/(A+B+N) equals or exceeds 0.045, on the first electrode film;
• an eleventh step of performing an annealing treatment and crystallizing the dielectric film;
• a twelfth step of forming a second electrode film on the dielectric film by CVD or ALD, thereby forming an MIS-structure capacitor with the first electrode film, the dielectric film, and the second electrode film;
• a thirteenth step of forming a capacitor wiring on the MIS capacitor by CVD;
• a fourteenth step of forming an opening above the bit contact through which the second interlayer insulating film is to be exposed;
• a fifteenth step of forming a third interlayer insulating film on the capacitor wiring by CVD, and subsequently selectively etching the third interlayer insulating film and forming a second contact hole inside the opening by lithography;
• and
• a sixteenth step of forming a barrier metallic film and a bit wiring in the second contact hole by CVD.