Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorMan-Jong YU
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes an insulation interlayer and an etch stop layer sequentially stacked on a substrate wherein a lower structure including a first contact pad is formed. A second contact pad penetrates the insulation interlayer and the etch stop layer and is connected to the first contact pad. The second contact pad protrudes from the etch stop layer. A pad spacer is provided between the second contact pad and the insulation interlayer. A lower electrode is provided on the etch stop layer and is connected to the second contact pad. A dielectric layer and an upper electrode are sequentially provided on the lower electrode.
Claims10
A semiconductor device, comprising:
- an insulation interlayer and an etch stop layer sequentially stacked on a substrate, wherein a lower structure including a first contact pad is formed;
- a second contact pad penetrating the insulation interlayer and the etch stop layer and connected to the first contact pad, the second contact pad protruding from the etch stop layer;
- a pad spacer provided between the second contact pad and the insulation interlayer;
- a lower electrode provided on the etch stop layer and connected to the second contact pad;
- and
- a dielectric layer and an upper electrode sequentially provided on the lower electrode.
A semiconductor device, comprising:
- a first insulation interlayer, an etch stop layer and a second insulation interlayer sequentially stacked on a substrate wherein a lower structure including a first contact pad is formed;
- a second contact pad penetrating the first insulation interlayer, the etch stop layer and the second insulation interlayer and contacting the first contact pad;
- a pad spacer provided between the second contact pad and the first insulation interlayer and the second insulation interlayer;
- a landing pad provided on the second insulation interlayer and contacting the second contact pad, the landing pad having a cross-sectional area greater than that of the second contact pad;
- a lower electrode contacting the landing pad;
- and
- a dielectric layer and an upper electrode sequentially provided on the lower electrode.
10-20. (canceled)
Dependencies are inferred from the claim text.