Nonvolatile semiconductor memory device and method for manufacturing same

A method for manufacturing a nonvolatile semiconductor memory device, comprising:

• forming a stacked structural unit on a major surface of a substrate, the stacked structural unit including a plurality of stacked layers of stacked component units, each of the stacked component units including a first conducting film made of a semiconductor of a first conductivity type, a first insulating film, a second conducting film made of a semiconductor of a second conductivity type, and a third insulating film, the forming of the stacked structural unit including multiply repeating a forming of each of the stacked component units on a major surface of a substrate, the forming of each of the stacked component units including,
• stacking the first conducting film,
• stacking the first insulating film,
• stacking the second conducting film between the stacking of the first conducting film and the stacking of the first insulating film, and
• stacking the third insulating film between the stacking of the second conducting film and the stacking of the first conducting film;
• making a through-hole in a first direction perpendicular to the major surface to pierce the stacked structural unit;
• forming a second insulating film on an inner wall of the through-hole and filling a semiconductor material into a remaining space on an inner side of the through-hole to form a semiconductor pillar;
• and
• forming a region of the semiconductor pillar having a high impurity concentration alternately arranged in the first direction with a region of the semiconductor pillar having a low impurity concentration by diffusing an impurity included in the second conducting film into the semiconductor pillar.