Semiconductor device, single-crystal semiconductor thin film-including substrate, and production methods thereof

Abstract

The present invention provides a semiconductor device, a single-crystal semiconductor thin film-including substrate, and production methods thereof, each allowing single-crystal semiconductor thin film-including single-crystal semiconductor elements produced by being transferred onto a low heat resistant insulating substrate to have enhanced transistor characteristics. The present invention is a production method of a semiconductor device including single-crystal semiconductor thin film-including single-crystal semiconductor elements on an insulating substrate, the production method including the successive steps of a first heat treatment step and a second heat treatment step, wherein in the first heat treatment step, a single-crystal semiconductor thin film undergoes a heat treatment at lower than 650° C., the single-crystal semiconductor thin film containing a doped impurity and including at least part of each one of single-crystal semiconductor elements, the single-crystal semiconductor thin film bonded to an insulating substrate, and in the second heat treatment step, the single-crystal semiconductor thin film undergoes a heat treatment at 650° C. or higher for a time shorter than a treatment time in the first heat treatment step.

Dependencies are inferred from the claim text.