Photodiode cell structure of photodiode integrated circuit for optical pickup and method of manufacturing the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsHa Woong Jeong, Kyoung Soo Kwon, Chae Dong Go, Deuk Hee Park
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Abstract
Disclosed herein is a photodiode cell, including: a first-type substrate; a second-type epitaxial layer disposed on the first-type substrate; heavily-doped second-type layers, each having a small depth, formed on the second-type epitaxial layer; and heavily-doped first-type layers, each having a narrow and shallow section, disposed on the second-type epitaxial layer and formed between the heavily-doped second-type layers, wherein the first-type and second-type have opposite doped states.
Claims10
A photodiode cell, comprising:
- a first-type substrate;
- a second-type epitaxial layer disposed on the first-type substrate;
- heavily-doped second-type layers, each having a small depth, formed on the second-type epitaxial layer;
- and
- heavily-doped first-type layers, each having a narrow and shallow section, disposed on the second-type epitaxial layer and formed between the heavily-doped second-type layers,
- wherein the first-type and second-type have opposite doped states.
A method of manufacturing a photodiode cell, comprising:
- forming a second-type epitaxial layer on a first-type substrate;
- forming heavily-doped second-type layers, each having a small depth, on the second-type epitaxial layer;
- and
- forming heavily-doped first-type layers, each having a narrow and shallow section, between the heavily-doped second-type layers.
Dependencies are inferred from the claim text.