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US 2010/0244175 A1Published application
Image sensor and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorByung Jun Park
Life of this patent
Estimating the term…
Abstract
The image sensor includes a substrate; a wiring structure formed on a front side of the substrate and including a plurality of wiring layers and a plurality of insulating films; a first well formed within the substrate and having a first conductivity type; and a first metal wiring layer directly contacting a backside of the substrate and configured to apply a first well bias to the first well.
Claims18
An image sensor comprising:
- a substrate;
- a wiring structure formed on a front side of the substrate and including a plurality of wiring layers and a plurality of insulating films;
- a first well formed within the substrate and having a first conductivity type;
- and
- a first metal wiring layer directly contacting a backside of the substrate and configured to apply a first well bias to the first well.
2 more elements
An image sensor comprising:
- a sensing region, a peripheral region, and a pad region defined within a substrate;
- photoelectric conversion elements formed in the sensing region;
- a first well formed in the peripheral region and having a first conductivity type;
- a wiring structure formed on a front side of the substrate and including a plurality of wiring layers and a plurality of insulating films;
- a first pad formed on a backside of the substrate in the pad region and receiving a first well bias;
- and
- a first metal wiring layer formed on the backside of the substrate in the peripheral region and electrically connected to the first pad to deliver the first well bias from the first pad to the first well.
4 more elements
-24. (canceled)
Dependencies are inferred from the claim text.