Highly-depleted laser doped semiconductor volume
AssigneeSiOnyx, Inc.
InventorsNathaniel J. McCaffrey, James E. Carey
Life of this patent
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Abstract
A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations.
Claims24
A photodiode, comprising:
- an n-type section;
- a p-type section;
- a laser treated semiconductor section;
- said laser treated semiconductor section disposed in electrical contact with said n-type section and said p-type section such that said n-type section and said p-type section can generate an electric field substantially capable of depleting at least a portion of said laser treated semiconductor section of free carriers and separating resulting electron-hole pairs generated in said laser treated semiconductor section.
A photodiode comprising,
- a first Schottky contact;
- a second Schottky contact;
- a laser treated semiconductor section;
- said laser treated semiconductor being at least partially disposed in electrical contact with said first Schottky contact and said second Schottky contact;
- said first Schottky contact having a higher work function than said second Schottky contact, such that said first Schottky contact and said second Schottky contact generate an electric field capable of substantially preventing electron-hole pairs generated by said laser treated semiconductor section from recombining in at least some portion of said laser treated semiconductor section.
A photodiode, comprising
- a first doped section;
- a second doped section;
- a laser treated semiconductor section;
- said second doped section being substantially bounded by said first doped section, said laser treated semiconductor section being disposed in electrical contact with said first doped section and said second doped section.
A photodiode, comprising
- a first doped section comprising at least one subsection;
- a second doped section comprising at least one subsection;
- a laser treated semiconductor section;
- a substrate comprising a first side;
- said laser treated semiconductor section, said first doped section and said second doped section being disposed on said first side of said substrate, said second doped section being substantially bounded by said first doped section, said laser treated semiconductor section being disposed in electrical contact with said first doped section and said second doped section.
A photodiode, comprising
- a first doped section comprising at least one subsection;
- a second doped section comprising at least one subsection;
- a laser treated semiconductor section;
- a substrate comprising a first and second side;
- said laser treated semiconductor section and said first doped section being disposed on said first side of said substrate, said second doped section being disposed on said second side of said substrate, said laser treated semiconductor section being disposed in electrical contact with said first doped section.
Dependencies are inferred from the claim text.