US 2010/0244172 A1 · SEMICONDUCTOR DEVICES AND METHODS FOR FORMING PATTERNED RADIATION BLOCKING ON A SEMICONDUCTOR DEVICE

Abstract

Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.

Claims19

Dependent claims

A method of manufacturing a microelectronic imager having a substrate, an imager sensor located at a first side of the substrate, integrated circuitry coupled to the image sensor, and a plurality of bond-pads at the first side of the substrate that are electrically coupled to the integrated circuitry, the method comprising:

forming a redistribution structure having through-substrate interconnects and traces electrically coupled to the through-substrate interconnects, the through-substrate interconnects extending from corresponding bond-pads to a second side of the substrate and the traces extending over the second side of the substrate, and the second side of the substrate being opposite the first side of the substrate;
disposing a first film over the traces, wherein the first film comprises a substantially non-photoreactive radiation blocking material;
photo-patterning a second film of a photoreactive material on the first film to have apertures in the second film in alignment with the corresponding traces;
and
etching openings through the first film in alignment with the apertures to expose the ball-pad portions of the traces.

2 more elements

A method of fabricating a semiconductor device having a die including a substrate with a first side and a second side, integrated circuitry, and bond-pads located at the first side that are electrically coupled to the integrated circuitry, the method comprising:

forming a conductive structure having interconnects and traces, wherein the interconnects are electrically coupled to the bond-pads and extend to the second side of the substrate, and wherein the traces extend from the interconnects over the second side of the substrate;
providing a preformed laminated bi-layer radiation blocking structure that is formed apart from the substrate, the laminated bi-layer radiation blocking structure having a first layer of an at least substantially non-photoreactive material and a second layer of a photoreactive material;
applying the preformed laminated bi-layer radiation blocking structure to the second side of the substrate so that the laminated bi-layer radiation blocking structure conforms to the topography of the traces and the interconnects;
photo-patterning apertures in the second layer of the laminated bi-layer radiation blocking structure that are aligned with ball-pad portions of the traces;
and
forming openings in the first layer of the laminated bi-layer radiation blocking structure without photo-patterning the first layer.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device

Life of this patent

Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device

Life of this patent

Abstract

Claims19